具体描述
Solid State Drives (SSDs) are gaining momentum in enterprise and client applications, replacing Hard Disk Drives (HDDs) by offering higher performance and lower power. In the enterprise, developers of data center server and storage systems have seen CPU performance growing exponentially for the past two decades, while HDD performance has improved linearly for the same period. Additionally, multi-core CPU designs and virtualization have increased randomness of storage I/Os. These trends have shifted performance bottlenecks to enterprise storage systems. Business critical applications such as online transaction processing, financial data processing and database mining are increasingly limited by storage performance. In client applications, small mobile platforms are leaving little room for batteries while demanding long life out of them. Therefore, reducing both idle and active power consumption has become critical. Additionally, client storage systems are in need of significant performance improvement as well as supporting small robust form factors. Ultimately, client systems are optimizing for best performance/power ratio as well as performance/cost ratio. SSDs promise to address both enterprise and client storage requirements by drastically improving performance while at the same time reducing power. "Inside Solid State Drives" walks the reader through all the main topics related to SSDs: from NAND Flash to memory controller (hardware and software), from I/O interfaces (PCIe/SAS/SATA) to reliability, from error correction codes (BCH and LDPC) to encryption, from Flash signal processing to hybrid storage. We hope you enjoy this tour inside Solid State Drives.
作者简介
Rino Micheloni (rino.micheloni@ieee.org) is Lead Flash Technologist at IDT (Integrated Device Technology). He has 18 years experience in NAND/NOR Flash memory design, architecture and algorithms as well as the related intellectual property. Before IDT, he was Senior Principal for Flash and Director of Qimonda's design center in Italy, developing 36 nm and 48 nm NAND memories. From 2001 to 2006 he managed the Napoli design center of STMicroelectronics focusing on the development of 90 nm and 60 nm MLC NAND Flash. Before that, he led the development of MLC NOR Flash. He is co-author of 103 U.S. patents and five Springer books on NOR/NAND/ECC/SSD. He is IEEE Senior Member and received the STMicroelectronics Exceptional Patent in 2003 and 2004, and the Qimonda IP Award in 2007. Alessia Marelli was born in Bergamo, Italy in 1980. She received her degree in Mathematical Science from “Università degli Studi di Milano – Bicocca”, Italy in 2003 with a thesis about ECC applied to Flash Memories. In 2003 she joined STMicroelectronics, Agrate B., Italy. She was involved in digital design of Multilevel NAND Memories, especially redundancy, ECC and algorithms. In 2007, she joined Qimonda as senior digital designer. In 2009 she joined Integrated Device Technology (IDT) as senior digital designer, where she takes care of ECC applied to SSD. She is co-author of some patents regarding Redundancy and ECC applied to Flash Memories. She is co-author of Memories in Wireless Systems (Springer, 2008), Error Correction Codes for Non-Volatile Memories (Springer, 2008), Inside NAND Flash Memories (Springer, 2010). Kam Eshghi is Sr. Director of Marketing in Enterprise Computing Division of IDT. Kam leads IDT’s business strategy, marketing and business development for flash controllers and PCIe switches. Kam drove the creation of IDT’s PCIe Enterprise Flash Controller product line and established IDT as a leader in this market. Kam has more than 18 years of industry experience. Prior to joining IDT, Kam built product lines in server and networking markets at HP, Intel, Crosslayer Networks, and Synopsys. During his time at Intel, Kam led a team to define strategy and product roadmaps for server chipsets. Previous to that as Vice President of Marketing and Business Development at Crosslayer Networks, Kam defined a family of Ethernet-IP switch processors and led all customer engagements, ultimately leading to LSI’s acquisition. Kam holds a M.S. in Electrical Engineering & Computer Science from Massachusetts Institute of Technology, and a Master’s in Business Administration and B.S. in Electrical Engineering & Computer Science both from University of California at Berkeley.
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用户评价
这本书带给我的最大震撼在于，它打破了“SSD是黑箱”的刻板印象。在此之前，我对SSD的寿命和可靠性总抱持着一种隐约的担忧，担心某一天数据会突然无声无息地丢失。然而，通过阅读这本书中关于磨损均衡（Wear Leveling）和错误纠正码（ECC）的详尽论述，我的顾虑烟消云散了。作者不仅解释了“为什么”这些技术是必要的，更重要的是，展示了“如何”通过复杂的算法来实现全盘的均匀写入，从而极大地延长了SSD的实际使用寿命。我特别喜欢其中关于“Over-Provisioning”（预留空间）的章节，它清晰地说明了为什么SSD制造商通常会“隐藏”一部分容量，这种设计哲学体现了对长期稳定运行的极致追求。这本书的观点是前瞻性的，它不仅涵盖了当前的主流技术，还对未来诸如3D NAND堆叠技术的瓶颈和下一代存储介质的可能性进行了合理的推测，这使得它不仅仅是一本技术参考书，更像是对未来存储技术发展趋势的一份深度报告。
评分说实话，我拿到这本书的时候，心里是有些打鼓的，毕竟“固态硬盘”这个主题听起来就带着浓厚的工程气息，我担心内容会过于学术化，读起来索然无味。然而，这本书的叙事方式出乎意料地引人入胜，它成功地将枯燥的技术细节包裹在了一个充满“工程美学”的故事外衣里。作者的笔触非常生动，尤其是在描述数据写入和擦除过程时，仿佛能看到电子在硅片上穿梭的“舞蹈”。书中对TRIM命令和垃圾回收（Garbage Collection）机制的阐述，彻底颠覆了我之前“随用随删”的直观认知。我以前总觉得删除文件就是一瞬间的事情，但这本书让我明白了，背后有一场复杂而持续的“清理运动”在后台进行。对于那些热衷于深度优化系统性能的DIY发烧友来说，这本书简直是一份无价的“秘籍”，它揭示了如何通过调整操作系统设置或使用特定工具来最大限度地榨取SSD的潜能，同时避免不必要的性能衰减。这种实用性与理论深度的完美结合，让我爱不释手，常常为了搞懂一个算法的精妙之处，而通宵达旦。
评分这本《Inside Solid State Drives》简直是为我这种对存储技术有着深度好奇心的人量身定做的百科全书！我原以为自己对SSD的了解已经算不错了，毕竟日常工作和生活都离不开它们，但这本书真正地把我带入了一个全新的维度。它不仅仅停留在“更快、更省电”这种表面功夫上，而是深入到闪存颗粒的物理结构、控制器的工作原理，乃至于数据管理和磨损均衡算法的每一个细节。特别是关于NAND闪存的SLC、MLC、TLC、QLC乃至最新的PLC的演进历史和各自的优缺点分析，简直是教科书级别的梳理。作者没有回避那些复杂晦涩的半导体物理概念，而是用一种非常清晰的逻辑链条将它们串联起来，即便是初次接触这些专业术语的读者，也能被引导着理解其背后的机制。我特别欣赏书中关于主控芯片的章节，它详细剖析了主控作为SSD的“大脑”是如何协调读写操作、进行错误校验（ECC）以及保障数据完整性的。翻阅这本书，我不再只是一个SSD的使用者，更像是理解了一个精密仪器的设计者，那种知识的充实感是无可替代的。它为我后续在企业级存储选型和优化方面的工作打下了无比坚实的基础。
评分从一个非硬件专业背景的软件工程师的角度来看，《Inside Solid State Drives》是一次令人振奋的跨界学习体验。这本书的价值在于它提供了一种“自顶向下”又“自底向上”的视角。它用清晰的图表和精准的定义，将那些看似高深莫测的存储概念变得触手可及。我发现自己过去在编写数据库操作或文件系统优化代码时，总是在与SSD进行“盲目交互”，读完此书后，我终于明白了每一次I/O请求背后发生的事情——主控如何调度，固件如何响应，以及闪存单元如何应对电荷变化。尤其是关于性能测试中常见陷阱（如缓存效应的影响）的剖析，为我设计更科学的性能基准测试提供了理论依据。这本书的语言风格是严谨的，但绝不枯燥，它充满了对工程挑战的敬畏感。读完之后，我不仅对自己的工作有了更深刻的理解，也对我们日常所依赖的数字世界的“基石”产生了由衷的尊重。这本书绝对值得任何希望在存储领域深耕的人士，将其作为案头必备的宝典。
评分我必须承认，这本书的深度是相当惊人的，它跨越了从基础材料科学到复杂固件架构的广阔领域。我尤其欣赏作者对于SSD安全擦除和数据恢复难点的探讨。在信息安全日益受到重视的今天，了解数据是如何被物理地、逻辑地存储和销毁至关重要。书中详细对比了不同擦除协议的有效性，并解释了为什么传统的“覆盖写入”在现代闪存架构下可能并不奏效，这直接影响了我司在处理退役硬盘数据销毁流程时的策略制定。此外，书中对NVMe协议的细致讲解，特别是PCIe通道的带宽分配和多队列管理，为我理解高性能计算环境中存储瓶颈的成因提供了关键视角。这本书的结构安排非常合理，从宏观的接口标准逐步收敛到微观的电路设计，这种层层递进的讲解方式，让读者能够稳步构建起完整的知识体系，避免了在技术海洋中迷失方向。
评分老師讓我讀了這本書，非常詳細地介紹了SSD的研究現狀，包括從物理原理到上層的軟硬件控制等等。寫各個章節review的基本都是大牛可以去follow一下他們的研究。
评分固态存储的基础知识
评分老師讓我讀了這本書，非常詳細地介紹了SSD的研究現狀，包括從物理原理到上層的軟硬件控制等等。寫各個章節review的基本都是大牛可以去follow一下他們的研究。
评分固态存储的基础知识
评分老師讓我讀了這本書，非常詳細地介紹了SSD的研究現狀，包括從物理原理到上層的軟硬件控制等等。寫各個章節review的基本都是大牛可以去follow一下他們的研究。
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